Reliability
Reliability is the probability that a packaged microelectronic device will perform its intended function over a defined time under a specified mission profile and environment. A modern reliability program is qualification‑driven, physics‑of‑failure aligned, interface‑focused, and mission‑profile based—combining JEDEC/AEC qualification with the stresses your product will actually see in the field. It enables business outcomes: protecting yield, controlling warranty exposure, and meeting safety/compliance targets without slowing time‑to‑market.
Why is Reliability Important?
Reliability gates qualification and time‑to‑market, and it directly impacts field returns and brand risk. As package density increases, interfacial stress rises, making delamination and fatigue more likely. As operating voltage climbs, insulation margins compress, raising leakage/breakdown risk. As moisture exposure increases (e.g., higher MSL or longer floor life), ionic mobility and corrosion accelerate.
Reliability programs protect:
Quality & Yield
Prevent defect escape and control latent defects before ramp.
Warranty & Field Returns
Reduce RMAs and the cost of failure after deployment.
Safety & Compliance
Meet automotive/industrial expectations (e.g., AEC‑Q100) and mission‑critical requirements.
Time‑to‑Market
Increase qualification predictability and accelerate production ramps.
The Evolution of Reliability
Early standards such as MIL‑STD‑883 were written for mostly hermetic packages. As the industry shifted to polymer‑based plastic packages, JEDEC introduced stress‑test‑driven qualification (JEP150) and moisture/reflow classifications (J‑STD‑020) to manage moisture, adhesion, and assembly risks. Today, reliability must also account for advanced packaging (2.5D/3D, fan‑out, chiplets) and wide‑bandgap (SiC/GaN) power devices with higher junction temperatures and field strengths.
1990s
From Hermetic to Plastic
Plastic‑encapsulated packages become widespread.
Reliability emphasis: MSL, popcorning/delamination during reflow.
Example: IPC/JEDEC J‑STD‑020 (moisture/reflow sensitivity).
2000s
Pb‑Free EraLead‑free solder raises reflow temperatures; early flip‑chip/wirebond hybrids.
Reliability emphasis: preconditioning (JESD22‑A113), adhesion under Pb‑free, board‑level assembly effects (JEP150).
2010s
Advanced PackagingFan‑out, WLCSP, and 2.5D interposers increase interface count and thinness.
Reliability emphasis: warpage/fatigue (thermo‑mechanical), moisture/ionic risks with density.
2020s & Beyond
AI/HPC & WBGHBM + 2.5D/3D, foundry/OSAT capacity ramps; SiC/GaN adoption in EV/industrial.
Reliability emphasis: higher junction temps, electric fields, and power‑cycling loads; insulation reliability and thermal management become limiting.
Timeline of key reliability qualification and packaging milestones
Reliability Demand in Advanced Packaging and Qualification
Up from ~$46B in 2024; ~9.5% CAGR (AI/HPC demand; more interfaces & stress density) 1, 2
Up from ~$15.1B in 2025; ~6.1% CAGR as test content expands for complex packages 3
Substrate complexity is a proxy for interface density and reliability‑critical interfaces 4
Growth proxy: Advanced packaging growth ≙ more interfaces and thinner structures → higher delamination/fatigue risk unless adhesion and modulus are controlled.
Mechanism linkage: Higher power density → higher Tj → accelerated aging; higher voltage → compressed insulation margins → greater sensitivity to voids and ionic contamination. Wide‑bandgap devices (SiC/GaN) push these limits further 8, 9.
Reliability Qualification Flow
A typical reliability program flows from mission profile → preconditioning → accelerated stress → FA feedback loop.
Three Main Reliability Components and Their Operational Implications
Reliability consolidates into three stress families—the systems where materials make the difference:
Must evolve to manage CTE mismatch and warpage
Thinner packages and more interfaces increase interfacial stress; thermal cycling drives delamination and solder/interconnect fatigue.
Must evolve to barrier+cleanliness+adhesion under wet state
Moisture diffusion and ion mobility cause corrosion, ECM, and leakage; higher MSLs and longer floor life raise exposure risks.
Higher fields (esp. Wide Bandgap power) increase sensitivity to leakage, partial discharge, and Time dependent Dielectric Breakdown (TDDB); insulation stability becomes limiting.
Common Reliability Tests
Tests are only meaningful if they accelerate field‑relevant mechanisms. Conditions vary by package/device/customer. Use this table as a mapping tool from stressor → expected failures → material levers. (Grounded in JEDEC JEP150/JESD22; examples only) 5
| Stress family | Test (Abbrev.) | Primary purpose | Typical conditions (example) | Common accelerated failure modes | Interfaces / material properties stressed |
|---|---|---|---|---|---|
| Assembly / moisture | Preconditioning (Precon) | Simulate MSL soak + Pb‑free reflow prior to other tests | Per J‑STD‑020 profile; soak per MSL; 3× reflows 6 | Popcorning, delamination, wire‑bond damage | Mold compound adhesion; passivation/mold; underfill integrity; package porosity |
| Moisture / ionic + bias | Temperature‑Humidity‑Bias (THB) | Assess passivation/barrier integrity under moisture + bias | 85 °C/85% RH, ≥1000 h with bias | Leakage, corrosion, ECM | Surface insulation; ionic cleanliness; barrier coatings; adhesion under wet state |
| Moisture / ionic (no bias) | HAST / uHAST | Accelerated version of THB under pressure | 110–130 °C, 85% RH, ≥96 h | Corrosion; passivation/mold degradation | Barrier performance; adhesion retention when saturated |
| Moisture / pressure | Autoclave (ACLV) | Stress moisture ingress & package interfaces | 121 °C, 15–30 psig, ≥168 h | Swelling; delamination; corrosion | Mold permeability; adhesion promoters; interface design |
| High‑temp storage | HTS | Elicit metallization/passivation aging (no bias) | 150–175 °C, ≥1000 h | Intermetallic growth; pad corrosion; passivation cracks | Metallization stack; mold stability; passivation integrity |
| Thermo‑mechanical | Temperature Cycling (TC) | Drive CTE‑mismatch fatigue & interfacial stress | –65→150 °C, 500–1000 cycles (air) | Delamination; solder/interconnect fatigue; die‑attach cracks | Adhesion; modulus/CTE tuning; underfill/MUF; substrate warpage |
| Thermo‑mechanical (rapid) | Thermal Shock (TS) | Rapid thermal excursions through liquid media | –65→150 °C, 300–1000 cycles (liquid) | Cracking; interfacial separation | Adhesion robustness; toughness vs. brittleness |
| Electrical / bias aging | HTOL | Validate wear‑out under electrical bias at temperature | 125–150 °C, 500–1000 h with bias | TDDB; leakage; parametric drift | Dielectric strength; void content; ionic cleanliness; passivation integrity |
Source mapping adapted from JEDEC JEP150 and JESD22 examples 5, 6 and additional technical references 10, 11, 12.
CAPLINQ Solutions for Reliability
Reliability requirements shift by infrastructure, but the same reality holds: as power density, temperature, voltage, and environmental exposure rise, performance is often limited by materials behavior at interfaces and surfaces. CAPLINQ supports consumer, automotive, and aerospace programs with materials that strengthen adhesion retention, environmental resistance, and dielectric stability at the system level.
- Epoxy molding compounds (EMCs): high-throughput molding, stable adhesion for high-volume packaging
- Underfills / molded underfills (MUF): drop and bend robustness for compact assemblies
- Conformal coatings: moisture barrier and surface insulation for daily-use environments
- Potting/encapsulation resins: sealing for wearables, IoT, and small modules
- Thermal interface materials (TIMs): temperature control to protect performance and battery life
- EMCs: thermal cycling capability, crack resistance, and adhesion retention for harsh duty cycles
- TIMs: sustained thermal performance to manage junction temperature in power and control electronics
- Potting/encapsulation resins: vibration resistance, sealing, and dielectric robustness
- High-CTI coatings: creepage and clearance support for high-voltage modules and busbars
- Primers/silanes: adhesion durability under high humidity, fluids, and thermal stress
- Conformal coatings: corrosion mitigation and insulation stability for long-life electronics
- Encapsulation resins: void control and dielectric stability for critical avionics and sensors
- Die-attach films/adhesives: mechanical stability across wide temperature swings
- Surface treatments and adhesion promoters: robust bonding on metals, ceramics, and composites
- TIMs: controlled thermal paths for high-reliability power and RF assemblies
Further Reading on Reliability
Enhance thermo‑mechanical, moisture/ionic, and electrical‑bias reliability across modern package environments.
Let our engineers recommend the right materials for your reliability stress envelope and package interfaces.
References
- Yole Group, Status of the Advanced Packaging Industry 2025 and press note: “Advanced packaging market set to reach $79.4B by 2030.” (Aug 31, 2025). Link
- Electronics Weekly summary of Yole: “Advanced packaging market on 9.5% CAGR to reach $79.4bn in 2030.” (Sept 3, 2025). Link
- Mordor Intelligence: Semiconductor Test Equipment Market Size & Growth to 2031 (accessed 2025–2026). Link
- Yole Group Strategy Insights: “AI fuels the future of advanced packaging” (advanced IC substrates ~$31B by 2030). (Aug 1, 2025). Link
- JEDEC JEP150A (Dec 2023): Stress‑Test‑Driven Qualification of and Failure Mechanisms Associated with Assembled Solid State Surface‑Mount Devices. Link
- IPC/JEDEC J‑STD‑020F: Moisture/Reflow Sensitivity Classification for Non‑Hermetic SMDs. Link
- Automotive Electronics Council (AEC): AEC‑Q100 document set. Link
- Qin, Y. et al., “Thermal management and packaging of wide and ultra‑wide bandgap power devices,” J. Phys. D, 56 (2023). Link
- Wang, Y. et al., “Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review,” Energies 15(18), 6670 (2022). Link
- Zhang, H.C., Lin, F., Zhao, T., Wensheng (2020). Modeling, Analysis, Design, and Tests for Electronics Packaging beyond Moore – §1.2.3 Stress & Reliability Issues. Elsevier.
- Chung, H., Wang, H., Blaabjerg, F., Pecht, M. (2016). Reliability of Power Electronic Converter Systems – §4.1 Introduction. IET.
- Chen, A., & Lo, R.H.-Y. (2012). Semiconductor Packaging: Materials Interaction and Reliability. CRC Press.


